• DocumentCode
    1845547
  • Title

    SiOCH low-k etching: quantitative prediction of surface reaction

  • Author

    Tatsumi, Tetsuya ; Nagahata, Kazunori ; Saitoh, Takaluro ; Morita, Yasushi

  • Author_Institution
    Semicond. Technol. Dev. Group, Sony Corp., Kanagawa, Japan
  • fYear
    2003
  • fDate
    2-4 June 2003
  • Firstpage
    239
  • Lastpage
    241
  • Abstract
    We propose a mechanism and a prediction model for SiOCH etching. The surface reaction depends on both incident fluxes from plasma and material properties (film composition and density). The sensitivity of etch rate to the change in incident CFx fluxes induces a narrow process window for the etching of SiOCH and porous SiOCH materials. Further cooperation between etching and other process engineers needs to be promoted to create a more reliable process module.
  • Keywords
    dielectric materials; dielectric thin films; integrated circuit interconnections; porous materials; silicon compounds; sputter etching; surface chemistry; SiOCH; SiOCH etching; density; film composition; porous SiOCH materials; sensitivity; surface reaction; Electrons; Etching; Plasma applications; Plasma density; Plasma measurements; Plasma properties; Polymers; Predictive models; Rough surfaces; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
  • Print_ISBN
    0-7803-7797-4
  • Type

    conf

  • DOI
    10.1109/IITC.2003.1219764
  • Filename
    1219764
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1845547