SiOCH low-k etching: quantitative prediction of surface reaction

We propose a mechanism and a prediction model for SiOCH etching. The surface reaction depends on both incident fluxes from plasma and material properties (film composition and density). The sensitivity of etch rate to the change in incident CF_x fluxes induces a narrow process window for the etching of SiOCH and porous SiOCH materials. Further cooperation between etching and other process engineers needs to be promoted to create a more reliable process module.