DocumentCode :
1845547
Title :
SiOCH low-k etching: quantitative prediction of surface reaction
Author :
Tatsumi, Tetsuya ; Nagahata, Kazunori ; Saitoh, Takaluro ; Morita, Yasushi
Author_Institution :
Semicond. Technol. Dev. Group, Sony Corp., Kanagawa, Japan
fYear :
2003
fDate :
2-4 June 2003
Firstpage :
239
Lastpage :
241
Abstract :
We propose a mechanism and a prediction model for SiOCH etching. The surface reaction depends on both incident fluxes from plasma and material properties (film composition and density). The sensitivity of etch rate to the change in incident CFx fluxes induces a narrow process window for the etching of SiOCH and porous SiOCH materials. Further cooperation between etching and other process engineers needs to be promoted to create a more reliable process module.
Keywords :
dielectric materials; dielectric thin films; integrated circuit interconnections; porous materials; silicon compounds; sputter etching; surface chemistry; SiOCH; SiOCH etching; density; film composition; porous SiOCH materials; sensitivity; surface reaction; Electrons; Etching; Plasma applications; Plasma density; Plasma measurements; Plasma properties; Polymers; Predictive models; Rough surfaces; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
Type :
conf
DOI :
10.1109/IITC.2003.1219764
Filename :
1219764
Link To Document :
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