Title :
Process optimization-the key to obtain highly reliable Cu interconnects
Author :
Fischer, A.H. ; von Glasow, A. ; Penka, S. ; Ungar, F.
Author_Institution :
Reliability Methodology, Infineon Technol. AG, Munich, Germany
Abstract :
In this paper, we describe electromigration and stressvoiding mechanism in copper interconnects.
Keywords :
copper; electromigration; internal stresses; reliability; silicon compounds; voids (solid); Cu interconnects; Cu-SiN; electromigration; process optimization; stressvoiding; Copper; Electrical resistance measurement; Electromigration; Etching; High temperature superconductors; Metallization; Monitoring; Plugs; Stress; Testing;
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
DOI :
10.1109/IITC.2003.1219768
