Title :
50-GHz Interconnect Design in Standard Silicon Technology
Author :
Kleveland, Bendik ; Lee, Thomas H. ; Wong, S. Simon
Author_Institution :
Center for Integrated Systems, Stanford University, Stanford, CA 94305
Abstract :
Coplanar waveguides were fabricated in a process that emulates silicon CMOS technologies with 5 to 10 metal layers. The observed S21 loss of 0.3dB/mm at 50 GHz is among the lowest ever reported with standard Al interconnects on Si/SiO2. Optimum design parameters were counter-intuitive: in some frequency ranges, the lowest loss was achieved with relatively narrow lines over a low-resistivity substrate. This was exploited in the design of transmission lines that are fully compatible with a CMOS technology. The process emulation was calibrated with a commercial 4-layer Al/Cu CMOS technology.
Keywords :
Artificial intelligence; CMOS process; CMOS technology; Coplanar waveguides; Dielectric substrates; Frequency; Impedance; Integrated circuit interconnections; Scattering parameters; Silicon;
Conference_Titel :
ARFTG Conference Digest-Spring, 51st
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-5686-1
DOI :
10.1109/ARFTG.1998.327295