• DocumentCode
    1845700
  • Title

    Mechanism for early failure in Cu dual damascene structure

  • Author

    Kim, Dae-Yong ; Wong, S. Simon

  • Author_Institution
    Stanford Univ., CA, USA
  • fYear
    2003
  • fDate
    2-4 June 2003
  • Firstpage
    265
  • Lastpage
    267
  • Abstract
    An infrared microscope and a convergent electron beam technique have been applied to detect and analyze the weak via in a Cu dual Damascene contact chain. It is shown that the early failure is due to cracking in the barrier metal layer, which opens up a fast diffusion path along the interface between the barrier metal and the dielectric. The subsequent opening and, in some cases, self-recovery of the via is also discussed. This early failure mode may impose severe limitation on the scalability of the dual Damascene structure.
  • Keywords
    copper; cracks; diffusion; failure analysis; fracture; integrated circuit interconnections; transmission electron microscopy; voids (solid); Cu; Cu dual damascene structure; convergent electron beam method; cracking; diffusion; failure mode; infrared microscopy; scalability; Copper; Dielectrics; Failure analysis; Infrared detectors; Integrated circuit interconnections; Integrated circuit technology; Microscopy; Microstructure; Scalability; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
  • Print_ISBN
    0-7803-7797-4
  • Type

    conf

  • DOI
    10.1109/IITC.2003.1219772
  • Filename
    1219772