DocumentCode
1845700
Title
Mechanism for early failure in Cu dual damascene structure
Author
Kim, Dae-Yong ; Wong, S. Simon
Author_Institution
Stanford Univ., CA, USA
fYear
2003
fDate
2-4 June 2003
Firstpage
265
Lastpage
267
Abstract
An infrared microscope and a convergent electron beam technique have been applied to detect and analyze the weak via in a Cu dual Damascene contact chain. It is shown that the early failure is due to cracking in the barrier metal layer, which opens up a fast diffusion path along the interface between the barrier metal and the dielectric. The subsequent opening and, in some cases, self-recovery of the via is also discussed. This early failure mode may impose severe limitation on the scalability of the dual Damascene structure.
Keywords
copper; cracks; diffusion; failure analysis; fracture; integrated circuit interconnections; transmission electron microscopy; voids (solid); Cu; Cu dual damascene structure; convergent electron beam method; cracking; diffusion; failure mode; infrared microscopy; scalability; Copper; Dielectrics; Failure analysis; Infrared detectors; Integrated circuit interconnections; Integrated circuit technology; Microscopy; Microstructure; Scalability; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN
0-7803-7797-4
Type
conf
DOI
10.1109/IITC.2003.1219772
Filename
1219772
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