Title :
Carbon nanotube interconnects: a process solution
Author :
Li, Jun ; Ye, Qi ; Cassell, Alan ; Koehne, Jessica ; Ng, H.T. ; Han, Jie ; Meyyappan, M.
Author_Institution :
NASA Ames Res. Center, Moffett Field, CA, USA
Abstract :
The susceptibility of common interconnect metals to electromigration at current densities of 106 A/cm2 or greater has been a concern. The ITRS Roadmap emphasizes interconnect technology as a critical element and calls for innovative material and process solutions. This talk will present the potential of carbon nanotubes (CNTs) as interconnects and a processing scheme to integrate them in device fabrication.
Keywords :
carbon nanotubes; current density; electromigration; interconnections; optical susceptibility; plasma CVD; C; CNT; SiO2; carbon nanotube; current density; electromigration; interconnect metals; interconnect technology; susceptibility; Carbon nanotubes; Conducting materials; Current density; Electromigration; Etching; Filling; Lithography; Mechanical factors; NASA; Space technology;
Conference_Titel :
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN :
0-7803-7797-4
DOI :
10.1109/IITC.2003.1219773
