An Easy to Use PSPICE Model for Power Transistors in RF Switching Operation and Including Voltage Dependent Output Capacitance

Author

Mediano, Arturo ; Molina, Pilar ; Navarro, Jes8#xOOFA;s

Author_Institution

Department of Electronics and Communications Â¿ University of Zaragoza, C/MarÃ\xada de Luna 3 Â¿ E50015 Â¿ Zaragoza Â¿ SPAIN, Tel.: +34-976-76 19 44 Â¿ Fax: +34-976-76 21 11 Â¿ Email: amediano@posta.unizar.es

Volume

35

fYear

1999

fDate

36312

Firstpage

1

Lastpage

6

Abstract

An easy to build and use power transistor model for high efficiency switching RF power amplifiers has been built and used. Advantages of the model are inclusion of a voltage variable capacitance (Cout) and time saved in its construction compared with classical methods. The model is useful to study the influence of Cout in the behaviour of the amplifier and has been yet used in that way with successful results for class E topology including experimental verification [1]. In this paper the structure of the model, the way to build it and some examples of its use are described. More details and results will be published in an extended version of this work.

Keywords

Capacitance; Communication switching; FETs; Operational amplifiers; Power transistors; Radio frequency; Radiofrequency amplifiers; SPICE; Topology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

ARFTG Conference Digest-Spring, 53rd

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5686-1

Type

conf

DOI

10.1109/ARFTG.1999.327330

Filename

4120023