Design of high-side MOSFET driver using discrete components for 24V operation

Author

Ali, Rosnazri ; Daut, Ismail ; Taib, Soib ; Jamoshid, Noor Shahida ; Razak, A.R.A.

fYear

2010

fDate

23-24 June 2010

Firstpage

132

Lastpage

136

Abstract

This paper presents the design of a high-side N-channel MOSFET driver using discrete components for 24Vdc operation. Special level shifting technique is used to increase the gate voltage higher than the supply voltage. Voltage readings at various points of the driver were also taken for reference. The designed high-side driver was tested to observe its performance with respect to different gate input frequencies, from 50Hz up to 150kHz using the MOSFET IRF730 as the switching device. The results obtained indicate that the driver circuit works well up to frequency of 150kHz where the width ratio found to be more than 72%.

Keywords

MOSFET; driver circuits; switching circuits; MOSFET IRF730; discrete component; driver circuit; frequency 150 kHz; gate voltage; high-side N-channel MOSFET driver; level shifting; supply voltage; switching device; voltage 24 V; voltage readings; Driver circuits; Inverters; Logic gates; MOSFET circuits; Switches; Threshold voltage; Bootstrap circuit; Floating MOSFET driver; H-bridge inverter design; High-side MOSFET driver; level shifter;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Engineering and Optimization Conference (PEOCO), 2010 4th International

Conference_Location

Shah Alam

Print_ISBN

978-1-4244-7127-0

Type

conf

DOI

10.1109/PEOCO.2010.5559191

Filename

5559191