Characterization of on-wafer RF passive components for RFIC devices using three-steps de-embedding method

Author

Siti, M. H Maisurah ; Mohd, N.O. ; Marzuki, A. ; Rahim, A. I Abdul ; Mohamed, R.Y.

Author_Institution

Microelectron. & Nano Technol., TMR&D Innovation Centre, Cyberjaya, Malaysia

fYear

2009

fDate

15-17 Dec. 2009

Firstpage

362

Lastpage

366

Abstract

This paper demonstrates the process of characterizing on-wafer RF components for RFIC devices by using a three-steps de-embedding method. Three RF passive components are used for this purpose: spiral inductor, metal-finger capacitor and silicide-block N-poly resistor. The DUTs together with their calibration structure was fabricated in 0.13 Â¿m CMOS technology. Comparisons between the simulated data, raw measured data and de-embedded data were made in order to see the accuracy of the de-embedding method.

Keywords

CMOS integrated circuits; capacitors; inductors; radiofrequency integrated circuits; resistors; CMOS technology; RFIC devices; metal-finger capacitor; on-wafer RF passive components; silicide-block N-poly resistor; size 0.13 mum; spiral inductor; three-steps de-embedding method; CMOS technology; Calibration; Capacitors; Impedance measurement; Inductors; Microelectronics; Radio frequency; Radiofrequency integrated circuits; Resistors; Spirals; CMOS; Calibration; Characterization; De-embedding; RFIC;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications (MICC), 2009 IEEE 9th Malaysia International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4244-5531-7

Type

conf

DOI

10.1109/MICC.2009.5431531

Filename

5431531