Title :
An improved passive lossless turn-on and turn-off snubber
Author :
He, Xiangning ; Finney, S.J. ; Williams, B.W. ; Green, T.C.
Author_Institution :
Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh, UK
Abstract :
An improved passive lossless turn on/off snubber is proposed, where energy trapped in the snubber is transferred to both the DC rail and the load. A wider operational range of load current, a higher switching frequency and lower peak switch current make this circuit more practical than conventional lossless snubbers. Design equations, simulations based on a simplified insulated gate bipolar transistor (IGBT) model and practical results are given
Keywords :
energy storage; insulated gate bipolar transistors; load (electric); overcurrent protection; power convertors; power transistors; semiconductor device models; switching circuits; DC rail; IGBT; design; energy storage; insulated gate bipolar transistor; load; load current; model; operational range; overcurrent protection; passive lossless turn on/off snubber; peak switch current; power transistors; simulations; switching frequency; Capacitance; Circuit simulation; Equations; Frequency; Inductance; Rails; Resistors; Snubbers; Switches; Switching circuits;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1993. APEC '93. Conference Proceedings 1993., Eighth Annual
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0983-9
DOI :
10.1109/APEC.1993.290689
