DocumentCode
1848923
Title
A Wideband Method for the Rigorous Low-Impedance Loadpull Measurement of High-Power Transistors Suitable for Large-Signal Model Validation
Author
Aaen, Peter ; Plá, Jaime ; Bridges, Daren ; Shumate, Eric
Author_Institution
RF Design Operations, Motorola SPS/NCSG/WISD, 2100 E. Elliot Rd., Mail Drop EL632, Tempe, AZ 85284, Peter.Aaen@motorola.com
Volume
38
fYear
2000
fDate
Nov. 2000
Firstpage
1
Lastpage
7
Abstract
This paper presents a rigorous method for low impedance loadpull measurements using a 6-section Tschebyscheff transforming water-cooled pre-matching test fixture. The transformers were designed to be able to accurately determine S-parameters that represent each fixture half at the fundamental frequency of operation fo and its second and third harmonics, 2fo and 3fo. A two-tier non-50 ¿ TRL calibration technique was used to establish the measurement reference planes. In order to accurately establish the calibrated system impedance, a simulated Time Domain Reflectometry (TDR) technique was employed. The calibration of the loadpull system was confirmed by calculating the difference between the measured and calculated transducer gain (¿Gt). This difference provides a measure of the measurement uncertainty. The largest uncertainty, in areas of interest on the Smith chart, was found to be 0.25 dB. The fixture was successfully utilized to measure the loadpull performance of one of Motorola´s LDMOS, 90 Watt, 1.9 GHz high power transistors.
Keywords
Calibration; Fixtures; Frequency; Gain measurement; Impedance measurement; Reflectometry; Scattering parameters; Testing; Transformers; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
ARFTG Conference Digest-Fall, 56th
Conference_Location
Boulder, AZ, USA
Print_ISBN
0-7803-5686-1
Type
conf
DOI
10.1109/ARFTG.2000.327435
Filename
4120134
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