Title :
A working device model of mercuric iodide X-ray detectors for XRF applications
Author :
Bao, X.J. ; Natarajan, M. ; Henderson, J.
Author_Institution :
TM Technol. Inc., Round Rock, TX, USA
Abstract :
Use of mercuric iodide detectors in commercial field portable X-ray fluorescence instruments (XRF) presents many challenges because of the stringent requirements. It is well known that the performance of mercuric iodide for radiation detection is highly variable among detectors. In this study, a consistent device model of mercuric iodide X-ray detectors is developed to interpret a wide range of behaviors observed in fabricating, characterizing, and application of mercuric iodide X-ray detectors. The model is based on the free carrier transport, carrier trapping, electric field distribution, surface effects, dead layers, interaction of radiation with mercuric iodide, and electronic noise. Results from computer simulation based on the model compare well with experimental data. The better understanding of mercuric iodide detectors gained through this device model will help the optimization of detector performance and manufacturing yield
Keywords :
X-ray detection; electron traps; fluorescence; hole traps; semiconductor counters; semiconductor device models; semiconductor device noise; HgI2; HgI2 X-ray detectors; X-ray fluorescence instruments; carrier trapping; computer simulation; dead layers; device model; electric field distribution; electronic noise; free carrier transport; surface effects; Clouds; Computer simulation; Electrons; Fluorescence; Instruments; Leak detection; Radiation detectors; Virtual manufacturing; X-ray detection; X-ray detectors;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3180-X
DOI :
10.1109/NSSMIC.1995.504180
