A working device model of mercuric iodide X-ray detectors for XRF applications

Author

Bao, X.J. ; Natarajan, M. ; Henderson, J.

Author_Institution

TM Technol. Inc., Round Rock, TX, USA

Volume

1

fYear

1995

fDate

21-28 Oct 1995

Firstpage

75

Abstract

Use of mercuric iodide detectors in commercial field portable X-ray fluorescence instruments (XRF) presents many challenges because of the stringent requirements. It is well known that the performance of mercuric iodide for radiation detection is highly variable among detectors. In this study, a consistent device model of mercuric iodide X-ray detectors is developed to interpret a wide range of behaviors observed in fabricating, characterizing, and application of mercuric iodide X-ray detectors. The model is based on the free carrier transport, carrier trapping, electric field distribution, surface effects, dead layers, interaction of radiation with mercuric iodide, and electronic noise. Results from computer simulation based on the model compare well with experimental data. The better understanding of mercuric iodide detectors gained through this device model will help the optimization of detector performance and manufacturing yield

Keywords

X-ray detection; electron traps; fluorescence; hole traps; semiconductor counters; semiconductor device models; semiconductor device noise; HgI₂; HgI₂ X-ray detectors; X-ray fluorescence instruments; carrier trapping; computer simulation; dead layers; device model; electric field distribution; electronic noise; free carrier transport; surface effects; Clouds; Computer simulation; Electrons; Fluorescence; Instruments; Leak detection; Radiation detectors; Virtual manufacturing; X-ray detection; X-ray detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-3180-X

Type

conf

DOI

10.1109/NSSMIC.1995.504180

Filename

504180