Broadband and tunable negative monolithic circuits for microwave active filters compensation

Author

Brucher, A. ; Meunier, P. ; Cenac, C. ; Jarry, B. ; Guillon, P.

Author_Institution

IRCOM, Limoges Univ., France

fYear

1995

fDate

15-16 May 1995

Firstpage

213

Lastpage

216

Abstract

In this article, GaAs MMIC negative resistance chips are presented. These devices are used to improve the performances of planar microstrip resonators structures. The broadband capabilities of these negative resistance circuits are illustrated with their use to compensate for the losses of two 4-pole bandpass microstrip half wave filters designed with alumina substrate and centered respectively at 1.5 GHz and 4 GHz. Finally, experimental results of bandstop active filters built on lossy high permittivity dielectric substrate (/spl epsi//sub r/=36) and also compensated for with these monolithic circuits confirm their great interest.<>

Keywords

III-V semiconductors; active filters; active networks; band-pass filters; band-stop filters; compensation; field effect MMIC; gallium arsenide; microstrip filters; microstrip resonators; microwave filters; negative resistance devices; 1.5 GHz; 4 GHz; GaAs; MMIC negative resistance chips; bandpass microstrip half wave filters; bandstop active filters; broadband capabilities; filter compensation; lossy high permittivity dielectric substrate; microwave active filters; planar microstrip resonator filter structures; Active filters; Band pass filters; Dielectric substrates; Gallium arsenide; MMICs; Microstrip filters; Microstrip resonators; Microwave circuits; Microwave devices; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995

Conference_Location

Orlando, FL, USA

Print_ISBN

0-7803-2590-7

Type

conf

DOI

10.1109/MCS.1995.470955

Filename

470955