A 2-32 GHz coplanar waveguide InAlAs/InGaAs-InP HBT cascode distributed amplifier

Author

Kobayashi, K.W. ; Cowles, J. ; Tran, L. ; Block, T. ; Oki, A.K. ; Streit, D.C.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1995

fDate

15-16 May 1995

Firstpage

195

Lastpage

198

Abstract

A 2-32 GHz InAlAs/InGaAs-InP HBT CPW distributed amplifier (DA) has been demonstrated which benchmarks the highest bandwidth reported for an HBT DA. The DA combines a 100 GHz f/sub max/ and 60 GHz f/sub T/ HBT technology with a cascode coplanar waveguide DA topology to achieve this record bandwidth. The cascode CPW DA demonstrates both design techniques and technology capability which can be applied to more complex circuit functions such as active baluns for mixers, active combiners/dividers, and low dc power-broadband amplification at millimeter-wave frequencies.<>

Keywords

III-V semiconductors; aluminium compounds; bipolar transistor circuits; coplanar waveguides; distributed amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; wideband amplifiers; 2 to 32 GHz; 60 to 100 GHz; InAlAs-InGaAs-InP; InAlAs/InGaAs-InP HBT distributed amplifier; active baluns; active combiners/dividers; cascode coplanar waveguide topology; circuit functions; low DC power-broadband amplification; millimeter-wave frequencies; mixers; Bandwidth; Circuit topology; Coplanar waveguides; Distributed amplifiers; Frequency conversion; Heterojunction bipolar transistors; Impedance matching; Indium compounds; Millimeter wave circuits; Millimeter wave technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995

Conference_Location

Orlando, FL, USA

Print_ISBN

0-7803-2590-7

Type

conf

DOI

10.1109/MCS.1995.470959

Filename

470959