DocumentCode :
1850601
Title :
A monolithic integrated HEMT frontend in CPW technology from 10-50 GHz for measurement systems or broadband receivers
Author :
Heilig, R. ; Hollmann, D. ; Baumann, G.
Author_Institution :
Alcatel SEL AG, Pforzheim, Germany
fYear :
1995
fDate :
15-16 May 1995
Firstpage :
191
Lastpage :
194
Abstract :
In this paper the design, performance and fabrication of a broadband frontend is shown. The frontend consists of a broadband matrix distributed amplifier with a gain of about 10 dB and a noise figure of 6.5 dB, a four stage distributed amplifier with 5 dB gain and an output power of 12 dBm, and a distributed mixer with a conversion gain of 0 dB with a LO-power of 0 dBm including the LO buffer amplifier. The active devices are 0.2 /spl mu/m recessed gate AlGaAs-HEMTs and the coplanar waveguide is used as the propagation medium. The devices have been simulated by using our own models for the active device and the passive coplanar elements. For the mixer design a nonlinear HEMT model was used. The total size of the frontend is 6 mm/spl times/6 mm including bias networks and block capacitors.<>
Keywords :
HEMT integrated circuits; MMIC amplifiers; coplanar waveguides; distributed amplifiers; field effect MIMIC; millimetre wave amplifiers; millimetre wave measurement; millimetre wave receivers; wideband amplifiers; 0 dB; 10 dB; 10 to 50 GHz; 5 dB; 6.5 dB; CPW technology; LO buffer amplifier; active devices; broadband matrix distributed amplifier; broadband receivers; conversion gain; coplanar waveguide; distributed mixer; four stage distributed amplifier; measurement systems; monolithic integrated HEMT frontend; nonlinear HEMT model; passive elements; recessed gate HEMTs; Capacitors; Coplanar waveguides; Distributed amplifiers; Fabrication; Gain; HEMTs; Noise figure; Power amplifiers; Power generation; Transmission line matrix methods;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2590-7
Type :
conf
DOI :
10.1109/MCS.1995.470960
Filename :
470960
Link To Document :
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