DocumentCode
1850628
Title
Measurement of Memory Effect of High-Power Si LDMOSFET Amplifier Using Two-tone Phase Evaluation
Author
Kim, Bumman ; Yang, Youngoo ; Cha, Jeonghyeon ; Woo, Young Yun ; Yi, Jaehyok
Author_Institution
Department of Electronic and Electrical Engineering and Microwave Application Research Center, Pohang University of Science and Technology, e-mail: bmkim@postech.ac.kr
Volume
40
fYear
2001
fDate
Nov. 2001
Firstpage
1
Lastpage
9
Abstract
We present a simple and straightforward method to accurately measure the relative phases of the fundamental and intermodulation components for a high power amplifier. The measurement is based on the cancellation between the low frequency signals from the down-converted amplifier output and reference signal generator. The cancellation principle, deembedding technique of the delay mismatch between the two path, and the accuracy and dynamic range for the measurements are also analyzed.
Keywords
Bandwidth; Capacitors; Circuits; Dynamic range; High power amplifiers; Phase measurement; Power amplifiers; Power measurement; Signal generators; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
ARFTG Conference Digest-Fall, 58th
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-5686-1
Type
conf
DOI
10.1109/ARFTG.2001.327497
Filename
4120200
Link To Document