Title :
A W-band monolithic low noise AlGaAs/InGaAs pseudomorphic HEMT amplifier mounted on a small hermetically-sealed package with waveguide interface
Author :
Itoh, Y. ; Nakayama, M. ; Nakahara, K. ; Takagi, T. ; Sakura, T. ; Yoshida, N. ; Katoh, T. ; Kashiwa, T. ; Ito, Y.
Author_Institution :
Electro-Opt. & Microwave Syst. Lab., Mitsubishi Electr. Corp., Kanagawa, Japan
Abstract :
A W-band monolithic low noise AlGaAs/InGaAs/GaAs pseudomorphic HEMT amplifier mounted on a small hermetically-sealed package has been developed for use in Advanced Microwave Scanning Radiometer. A six-stage amplifier cascading three two-stage MMIC amplifier chips is assembled on a small hermetically-sealed package with waveguide interface and has achieved a noise figure of 4.3 dB with a gain of 28.1 dB at 91 GHz. The overall amplifier measures 12/spl times/32.8/spl times/5.4 mm/sup 3/. This is the first W-band multi-stage monolithic low noise amplifier mounted on a hermetically-sealed package.<>
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; indium compounds; integrated circuit packaging; millimetre wave amplifiers; 28.1 dB; 4.3 dB; 91 GHz; Advanced Microwave Scanning Radiometer; AlGaAs-InGaAs-GaAs; W-band; cascade; hermetically-sealed package; multi-stage monolithic low noise amplifier; pseudomorphic HEMT amplifier; six-stage amplifier; two-stage MMIC amplifier chips; waveguide interface; Assembly; Gallium arsenide; Indium gallium arsenide; Low-noise amplifiers; MMICs; Microwave amplifiers; Microwave radiometry; PHEMTs; Packaging; Waveguide components;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2590-7
DOI :
10.1109/MCS.1995.470961
