• DocumentCode
    1850798
  • Title

    Test of a double-sided double-metal silicon microstrip detector with an ONO insulator

  • Author

    Tsuboyama, T. ; Haba, J. ; Ikeda, H. ; Iwasaki, H. ; Matsuda, T. ; Ozaki, H. ; Tanaka, M. ; Yamada, Y. ; Saito, Y. ; Akamine, K. ; Inoue, M. ; Yamanaka, J. ; Kadoi, K. ; Takano, R. ; Kojima, Y. ; Miyahara, S. ; Kamiya, M. ; Okuno, S. ; Avrillon, S. ; Hazu

  • Author_Institution
    Dept. of Phys., Nat. Lab. for High Energy Phys., Ibaraki, Japan
  • Volume
    1
  • fYear
    1995
  • fDate
    21-28 Oct 1995
  • Firstpage
    192
  • Abstract
    A double-sided double-metal silicon microstrip detector with an ONO (SiO2-Si3N4-SiO2) insulator has been tested. The full-depletion voltage and field plate voltage were found to be 50 V and -25 V, respectively. The results of tests with an infrared (IR) laser and a 90Sr β source are presented
  • Keywords
    beta-ray detection; silicon radiation detectors; -25 V; 50 V; 90Sr β source; IR laser; ONO insulator; Si; SiO2-Si3N4-SiO2; double-sided double-metal Si microstrip detector; field plate voltage; full-depletion voltage; infrared laser; Capacitance; Decision support systems; Detectors; Insulation; Insulator testing; Microstrip; Physics; Silicon; Strips; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-3180-X
  • Type

    conf

  • DOI
    10.1109/NSSMIC.1995.504207
  • Filename
    504207
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1850798