DocumentCode
1850813
Title
Process dependence of the capacitance of silicon microstrip detectors
Author
Wheadon, R. ; Tonelli, G. ; Bilei, G.-M. ; Bartalini, P. ; Hall, G.
Author_Institution
Istituto Nazionale di Fisica Nucl., Pisa, Italy
Volume
1
fYear
1995
fDate
21-28 Oct 1995
Firstpage
196
Abstract
Strip capacitance is an important parameter in determining the noise performance of silicon microstrip systems. For LHC tracking applications, the combined requirements of short shaping time and low power consumption for the readout electronics strongly emphasise this fact. Significant differences in strip capacitances from different processes have been observed on a range of both p-side and n-side devices, and the results are presented here
Keywords
capacitance; position sensitive particle detectors; semiconductor device noise; silicon radiation detectors; LHC tracking; Si microstrip detectors; n-side device; noise; p-side device; power consumption; readout electronics; shaping time; strip capacitance; Capacitance; Detectors; Energy consumption; Geometry; Large Hadron Collider; Microstrip; Silicon; Strips; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-3180-X
Type
conf
DOI
10.1109/NSSMIC.1995.504208
Filename
504208
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