Title :
Process dependence of the capacitance of silicon microstrip detectors
Author :
Wheadon, R. ; Tonelli, G. ; Bilei, G.-M. ; Bartalini, P. ; Hall, G.
Author_Institution :
Istituto Nazionale di Fisica Nucl., Pisa, Italy
Abstract :
Strip capacitance is an important parameter in determining the noise performance of silicon microstrip systems. For LHC tracking applications, the combined requirements of short shaping time and low power consumption for the readout electronics strongly emphasise this fact. Significant differences in strip capacitances from different processes have been observed on a range of both p-side and n-side devices, and the results are presented here
Keywords :
capacitance; position sensitive particle detectors; semiconductor device noise; silicon radiation detectors; LHC tracking; Si microstrip detectors; n-side device; noise; p-side device; power consumption; readout electronics; shaping time; strip capacitance; Capacitance; Detectors; Energy consumption; Geometry; Large Hadron Collider; Microstrip; Silicon; Strips; Testing; Voltage;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3180-X
DOI :
10.1109/NSSMIC.1995.504208
