• DocumentCode
    1850861
  • Title

    Ultra-thin Super High Frequency two-port ALN contour-mode resonators and filters

  • Author

    Rinaldi, M. ; Zuniga, C. ; Zuo, C. ; Piazza, G.

  • Author_Institution
    Univ. of Pennsylvania, Philadelphia, PA, USA
  • fYear
    2009
  • fDate
    21-25 June 2009
  • Firstpage
    577
  • Lastpage
    580
  • Abstract
    This paper reports on the demonstration of a new class of ultra-thin (250 nm thick) super high frequency (SHF) AlN piezoelectric two-port resonators and filters. A thickness field excitation scheme was employed to excite a higher order contour extensional mode of vibration in an AlN nano plate (250 nm thick) above 3 GHz and synthesize a 1.96 GHz narrow-bandwidth channel-select filter. The devices of this work are able to operate over a frequency range from 1.9 to 3.5 GHz and are employed to synthesize the highest frequency MEMS filter based on electrically self-coupled AlN contour-mode resonators. Very narrow bandwidth (~ 0.35%) and high off-band rejection (~ 35 dB) were achieved at an operating frequency of 1.96 GHz. This first prototype showed insertion loss of 11 dB, which can be improved to few dB if parasitic elements are eliminated or device capacitance is increased.
  • Keywords
    UHF filters; aluminium compounds; crystal filters; crystal resonators; micromechanical resonators; microwave filters; resonator filters; two-port networks; MEMS filter; frequency 1.9 GHz to 3.5 GHz; insertion loss; loss 11 dB; narrow-bandwidth channel-select filter; piezoelectric filters; size 250 nm; thickness field excitation scheme; two-port contour-mode filter; ultra-thin super high frequency two-port resonator; Aluminum nitride; Bandwidth; Frequency synthesizers; Insertion loss; Micromechanical devices; Parasitic capacitance; Prototypes; Radio frequency; Resonator filters; Substrates; MEMS filters; Resonators; Super High Frequency; aluminum nitride (AlN) film; contour-mode resonators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
  • Conference_Location
    Denver, CO
  • Print_ISBN
    978-1-4244-4190-7
  • Electronic_ISBN
    978-1-4244-4193-8
  • Type

    conf

  • DOI
    10.1109/SENSOR.2009.5285390
  • Filename
    5285390