CPW phase shifter using barium strontium titanate thin film on silicon substrate

Author

Hargsoon Yoon ; Vinoy, K.J. ; Abraham, J.K. ; Varadan, V.K.

Author_Institution

Center of Eng. of Electron. & Acoust. Mater. & Devices, Pennsylvania State Univ., University Park, PA, USA

Volume

3

fYear

2003

fDate

22-27 June 2003

Firstpage

970

Abstract

In this paper the design and development of a coplanar waveguide phase shifter on high resistivity silicon substrate is presented. This design makes use of BaSrTiO/sub 3/ thin film (50% dielectric tunability) grown on SiO/sub 2//poly-Si by RF sputtering method. A new process flow has been developed to enable full compatibility for direct integration with current CMOS technology. Other important features of this design are the bilateral interdigital structure, and the inclusion of a polysilicon layer for improved performance.

Keywords

barium compounds; coplanar waveguide components; ferroelectric devices; ferroelectric thin films; microwave phase shifters; silicon; sputtered coatings; strontium compounds; BaSrTiO/sub 3/; CMOS technology; RF sputtering; Si; bilateral interdigital structure; coplanar waveguide phase shifter; dielectric tunability; direct integration; ferroelectric thin film; full compatibility; high resistivity silicon substrate; polysilicon layer; process flow; Barium; Coplanar waveguides; Dielectric substrates; Dielectric thin films; Phase shifters; Semiconductor thin films; Silicon; Sputtering; Strontium; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium, 2003. IEEE

Conference_Location

Columbus, OH, USA

Print_ISBN

0-7803-7846-6

Type

conf

DOI

10.1109/APS.2003.1220072

Filename

1220072