Monolithic VCO and mixer for Q-band transceiver using InP-based HBT process

Author

Tran, L. ; Cowles, J. ; Block, T. ; Huei Wang ; Yonaki, J. ; Lo, D. ; Dow, S. ; Allen, B. ; Streit, D. ; Oki, A. ; Loughran, S.

Author_Institution

Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1995

fDate

15-16 May 1995

Firstpage

101

Lastpage

104

Abstract

Monolithic VCOs and mixers have been developed for Q-band FMCW transceiver applications using an InP-based HBT process. Tuning range, output power, and phase noise have been characterized for the HBT VCOs, while conversion loss and noise figure were measured for the Schottky diode mixers. The VCO shows 10-dB better phase noise performance over a similar design based on a GaAs HBT process. Measured at very low IF, the InP-based Schottky diode mixer demonstrates more than 1 dB noise figure improvement over the same design based on GaAs Schottky process. The InP mixer also requires a very low LO power at only 1 dBm for a 8-dB conversion loss.<>

Keywords

III-V semiconductors; MMIC mixers; MMIC oscillators; Schottky diode mixers; bipolar MMIC; heterojunction bipolar transistors; indium compounds; microwave oscillators; transceivers; voltage-controlled oscillators; 8 dB; HBT VCOs; IF; InP; Q-band FMCW transceiver; Schottky diode mixers; conversion loss; monolithic VCO/mixer chip; noise figure; output power; phase noise; tuning range; Gallium arsenide; Heterojunction bipolar transistors; Noise figure; Noise measurement; Phase noise; Power generation; Power measurement; Schottky diodes; Transceivers; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995

Conference_Location

Orlando, FL, USA

Print_ISBN

0-7803-2590-7

Type

conf

DOI

10.1109/MCS.1995.470981

Filename

470981