X-band MMIC switch with 70 dB isolation and 0.5 dB insertion loss

Author

Blackwell, D.A. ; Dawson, D.E. ; Buck, D.C.

Author_Institution

Westinghouse Electr. Corp., Baltimore, MD, USA

fYear

1995

fDate

15-16 May 1995

Firstpage

97

Lastpage

100

Abstract

A single-pole, single-throw reflective MMIC switch with 0.5 dB insertion loss and 70 dB isolation over X-band has been demonstrated. A fabrication process that was optimized to achieve the best performance for switch FETs produced this exceptional device. The FET OFF capacitance was reduced by a factor of 1.6 by selectively recessing into the backside of the wafer underneath the FETs to within 1 /spl mu/m of the top surface. The FET ON resistance remained the same. The reduced FET OFF capacitance allowed the use of larger periphery FETs to obtain the improved performance. The Ron-Coff product of this device is 30% lower than previously reported results.<>

Keywords

field effect MMIC; field effect transistor switches; 0.5 dB; Ron-Coff product; X-band; capacitance; fabrication; insertion loss; isolation; resistance; single-pole single-throw reflective MMIC switch; switch FETs; Capacitance; Etching; FETs; Fabrication; Gallium arsenide; Impedance; Insertion loss; MMICs; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995

Conference_Location

Orlando, FL, USA

Print_ISBN

0-7803-2590-7

Type

conf

DOI

10.1109/MCS.1995.470982

Filename

470982