CFET-a new high quality MMIC control device

Author

Seymour, D.J. ; Coats, R.P. ; Lehmann, R.E. ; Helvey, J.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1995

fDate

15-16 May 1995

Firstpage

95

Lastpage

96

Abstract

A new GaAs device developed for use in microwave monolithic control circuitry has been demonstrated. Known as a CFET, for Control Field Effect Transistor, this device eliminates the need for a conventional submicron gate by achieving control by use of a gate located behind the source-drain channel. The resulting capacitance is smaller than a conventional MESEET, resulting in a figure of merit of 800 GHz as compared to 250 GHz for a conventional MESFET. The device capabilities are demonstrated by measured performance of a SPDT switch providing 0.35-dB insertion loss and 20-dB isolation over the DC -10.0-GHz frequency band.<>

Keywords

III-V semiconductors; capacitance; field effect MMIC; field effect transistor switches; gallium arsenide; microwave field effect transistors; 0 to 10 GHz; 0.35 dB; CFET; GaAs; MMIC control device; SPDT switch; capacitance reduction; control field effect transistor; microwave monolithic control circuitry; Capacitance; FETs; Field effect MMICs; Frequency measurement; Gallium arsenide; Loss measurement; MESFETs; Microwave circuits; Microwave devices; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995

Conference_Location

Orlando, FL, USA

Print_ISBN

0-7803-2590-7

Type

conf

DOI

10.1109/MCS.1995.470983

Filename

470983