• DocumentCode
    1851323
  • Title

    Dynamic and leakage power reduction in MTCMOS circuits using an automated efficient gate clustering technique

  • Author

    Anis, Mohab ; Areibi, Shawki ; Mahmoud, Mohamed ; Elmasry, Mohamed

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    480
  • Lastpage
    485
  • Abstract
    Reducing power dissipation is one of the most principle subjects in VLSI design today. Scaling causes subthreshold leakage currents to become a large component of total power dissipation. This paper presents two techniques for efficient gate clustering in MTCMOS circuits by modeling the problem via Bin-Packing (BP) and Set-Partitioning (SP) techniques. An automated solution is presented, and both techniques are applied to six benchmarks to verify functionality. Both methodologies offer significant reduction in both dynamic and leakage power over previous techniques during the active and standby modes respectively. Furthermore, the SP technique takes the circuit´s routing complexity into consideration which is critical for Deep Sub-Micron (DSM) implementations. Sufficient performance is achieved, while significantly reducing the overall sleep transistors´ area. Results obtained indicate that our proposed techniques can achieve on average 90% savings for leakage power and 15% savings for dynamic power.
  • Keywords
    CMOS digital integrated circuits; bin packing; circuit complexity; circuit layout CAD; circuit optimisation; integrated circuit layout; leakage currents; logic partitioning; low-power electronics; network routing; MTCMOS circuits; VLSI design; active modes; automated efficient gate clustering technique; benchmarks; bin-packing techniques; circuit routing complexity; deep sub-micron implementations; dynamic power reduction; leakage power reduction; multi-threshold CMOS technology; power dissipation reduction; set-partitioning techniques; sleep transistor area; standby modes; subthreshold leakage currents; CMOS technology; Circuits; Degradation; Design engineering; Permission; Power dissipation; Power engineering and energy; Resistors; Subthreshold current; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference, 2002. Proceedings. 39th
  • ISSN
    0738-100X
  • Print_ISBN
    1-58113-461-4
  • Type

    conf

  • DOI
    10.1109/DAC.2002.1012673
  • Filename
    1012673