GaAs monolithic single-chip transceiver

Author

Boveda, A. ; Ortigoso, F.

Author_Institution

Alcatel Stand. Electr., Madrid, Spain

fYear

1995

fDate

15-16 May 1995

Firstpage

31

Lastpage

34

Abstract

A single-chip transmitter/receiver MMIC operating from 1.25 to 3 GHz and incorporating most of the RF functions of a modern communication system is presented. The device incorporates: a direct vector modulator with the necessary phase shifter circuits, an output amplifier for the transmitter, a low-noise amplifier and a down-converter with image rejection. The circuit has 60 MESFETs and more than 250 passive components in a 5.0/spl times/2.4 mm chip and has been manufactured using 0.5 micron GaAs MESFET process.<>

Keywords

III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; field effect MMIC; gallium arsenide; transceivers; 0.5 micron; 1.25 to 3 GHz; GaAs; LNA; MESFET; UHF transceiver; direct vector modulator; down-converter; image rejection; low-noise amplifier; monolithic single-chip transceiver; output amplifier; phase shifter circuits; transmitter/receiver MMIC; Circuits; Gallium arsenide; Low-noise amplifiers; MESFETs; MMICs; Phase modulation; Phase shifters; Radio frequency; Transceivers; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995

Conference_Location

Orlando, FL, USA

Print_ISBN

0-7803-2590-7

Type

conf

DOI

10.1109/MCS.1995.470997

Filename

470997