Very low-current and small-size GaAs MMICs for L-band front-end applications

Author

Imai, Yuhki ; Tokumitsu, Masami ; Minakawa, Akira ; Sugeta, Takayuki ; Aikawa, Masayoshi

Author_Institution

NTT LSI Lab., Atsugi, Japan

fYear

1989

fDate

22-25 Oct. 1989

Firstpage

71

Lastpage

74

Abstract

Very-low-current and small-size GaAs MMICs (monolithic microwave integrated circuits) were developed for L-band front-end applications. The MMICs fully employ lumped LC elements with uniplanar configurations. There are two kinds of MMICs: a low-noise amplifier and a mixer. The low-noise amplifier has a noise figure of 2.5 dB and a gain of 11.5 dB. The mixer has a conversion gain of 12.5 dB with small LO power of -3 dBm. Total current dissipation of the two MMICs is less than 8 mA with 3-V drain bias voltage.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; mixers (circuits); receivers; ultra-high-frequency amplifiers; 11.5 dB; 12.5 dB; 2.5 dB; 3 V; 8 mA; GaAs; L-band; LNA; MMICs; UHF; drain bias voltage; front-end applications; low-noise amplifier; lumped LC elements; mixer; monolithic microwave integrated circuits; uniplanar configurations; Circuit testing; FETs; Gallium arsenide; L-band; Laboratories; Low-noise amplifiers; MMICs; Noise figure; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/GAAS.1989.69296

Filename

69296