5 watt high efficiency wideband 7 to 11 GHz HBT MMIC power amplifier

Author

Komiak, J.J. ; Yang, L.W.

Author_Institution

Martin Marietta Labs., Syracuse, NY, USA

fYear

1995

fDate

15-16 May 1995

Firstpage

17

Lastpage

20

Abstract

A fully monolithic HBT power amplifier that has established new benchmarks for bandwidth and efficiency at X-band is reported. Power-added efficiencies of 56% max/38% min/44.4% average across 7 to 11 GHz are the highest X-band efficiencies and widest bandwidth reported for MMIC HPA´s. These amplifiers have demonstrated high power levels (up to 7.3 watts) with high gain (11 to 14.1 dB) under thermally challenging long pulse (500 /spl mu/sec) high duty cycle (25%) conditions. The amplifiers were fabricated using an advanced re-aligned AlGaAs/GaAs power HBT process with a plated bathtub heat sink.<>

Keywords

MMIC power amplifiers; bipolar MMIC; heterojunction bipolar transistors; microwave power amplifiers; wideband amplifiers; 38 to 56 percent; 5 to 7.3 W; 7 to 11 GHz; AlGaAs-GaAs; HBT MMIC power amplifier; X-band; monolithic IC; plated bathtub heat sink; re-aligned AlGaAs/GaAs power HBT process; wideband type; Bandwidth; Broadband amplifiers; Gallium arsenide; Heat sinks; Heterojunction bipolar transistors; High power amplifiers; MMICs; Power amplifiers; Pulse amplifiers; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1995. Digest of Papers., IEEE 1995

Conference_Location

Orlando, FL, USA

Print_ISBN

0-7803-2590-7

Type

conf

DOI

10.1109/MCS.1995.471000

Filename

471000