Title :
Material and device characterization to improve yield and performance
Author_Institution :
Dept. of Chem. & Nucl. Eng., Massachusetts Univ., Lowell, MA, USA
Abstract :
Summary form only given. In this paper, TEM characterization of thin film devices of the electronic materials in addition to thin film diamond is emphasized to solve problems of poor control over interfaces and to understand a complex set of parameters in deposition techniques which have hindered the deposition of device-quality films. Also, strategies of the fast turn-around-time for failure analysis in electronic devices are discussed with respect to efficient sample preparation, non-destructive technique, and advanced TEM analysis for nanostructural characteristics
Keywords :
boron compounds; crystal growth; diamond; electron microscopy; nondestructive testing; thin film devices; transmission electron microscopy; BN; C; TEM characterization; advanced TEM analysis; deposition techniques; device characterization; device-quality films; electronic materials; failure analysis; interfaces; nanostructural characteristics; nondestructive technique; sample preparation; thin film devices; thin film diamond; Chemical engineering; Chemical technology; Crystalline materials; Electrons; Optical films; Semiconductor thin films; Spectroscopy; Sputtering; Thermal conductivity; Thin film devices;
Conference_Titel :
Electro/95 International. Professional Program Proceedings.
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-2633-4
DOI :
10.1109/ELECTR.1995.471022
