Title :
Examination of silicon material properties using THz time-domain spectroscopy
Author :
Pejcinovic, Branimir
Author_Institution :
Electr. & Comput. Eng. Dept., Portland State Univ., Portland, OR, USA
Abstract :
High-resistivity silicon is a very popular choice for substrate material when examining e.g. various thin films, biological samples etc. using THz radiation. This paper provides an overview of research on its THz properties, examines various practical issues appearing when determining its properties and reports results on complex index of refraction, permittivity and conductivity, obtained using modern instrumentation. Potential problems related to water absorption are highlighted. Various Drude models and parameters are also presented and discussed.
Keywords :
electrical conductivity; electrical resistivity; elemental semiconductors; permittivity; refractive index; silicon; terahertz wave spectra; Drude models; Si; biological samples; conductivity; high-resistivity silicon; permittivity; refraction index; substrate material; terahertz properties; terahertz radiation; terahertz time-domain spectroscopy; thin films; water absorption; Conductivity; Indexes; Permittivity; Reflection; Silicon; Spectroscopy; Time-domain analysis;
Conference_Titel :
Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2014 37th International Convention on
Conference_Location :
Opatija
Print_ISBN :
978-953-233-081-6
DOI :
10.1109/MIPRO.2014.6859526
