Examination of silicon material properties using THz time-domain spectroscopy

Author

Pejcinovic, Branimir

Author_Institution

Electr. & Comput. Eng. Dept., Portland State Univ., Portland, OR, USA

fYear

2014

fDate

26-30 May 2014

Firstpage

22

Lastpage

26

Abstract

High-resistivity silicon is a very popular choice for substrate material when examining e.g. various thin films, biological samples etc. using THz radiation. This paper provides an overview of research on its THz properties, examines various practical issues appearing when determining its properties and reports results on complex index of refraction, permittivity and conductivity, obtained using modern instrumentation. Potential problems related to water absorption are highlighted. Various Drude models and parameters are also presented and discussed.

Keywords

electrical conductivity; electrical resistivity; elemental semiconductors; permittivity; refractive index; silicon; terahertz wave spectra; Drude models; Si; biological samples; conductivity; high-resistivity silicon; permittivity; refraction index; substrate material; terahertz properties; terahertz radiation; terahertz time-domain spectroscopy; thin films; water absorption; Conductivity; Indexes; Permittivity; Reflection; Silicon; Spectroscopy; Time-domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2014 37th International Convention on

Conference_Location

Opatija

Print_ISBN

978-953-233-081-6

Type

conf

DOI

10.1109/MIPRO.2014.6859526

Filename

6859526