SVX/silicon detector studies

Author

Bagby, L. ; Johnson, M. ; Lipton, R. ; Gu, W.

Author_Institution

Fermi Nat. Accel. Lab., Batavia, IL, USA

Volume

1

fYear

1995

fDate

21-28 Oct 1995

Firstpage

474

Abstract

AC coupled silicon detectors, being used for the Dφ upgrade, may have substantial voltage across the coupling capacitor. Failed capacitors can present ~50 V to the input of the SVX, Silicon Vertex, device. We measured the effects that failed detector coupling capacitors have on the SVXD (rad soft 3 μm), SVXH (rad hard 1.2 μm), and SVXIIb (rad soft 1.2 μm) amplifier/readout devices. The test results show that neighboring channels saturate when an excessive voltage is applied directly to a SVX channel. We believe that the effects are due to current diffusion within the SVX substrate rather than surface currents on the detectors. This paper discusses the magnitude of the saturation and a possible solution to the problem

Keywords

detector circuits; nuclear electronics; silicon radiation detectors; AC coupled silicon detectors; SVX detectors; SVX substrate; SVX/silicon detectors; SVXD; SVXH; SVXIIb; Si detectors; Silicon Vertex device; amplifier/readout devices; coupling capacitor; current diffusion; failed capacitors; failed detector coupling capacitors; neighboring channel saturation; surface currents; Capacitors; Circuit simulation; Clamps; Detectors; Diodes; Probes; Protection; Resistors; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-3180-X

Type

conf

DOI

10.1109/NSSMIC.1995.504270

Filename

504270