Impact of microstrip width and annealing time on the characteristics of micro-scale graphene FETs

Author

Poljak, M. ; Wang, Michael ; Zonja, S. ; Derek, V. ; Ivanda, M. ; Wang, K.L. ; Suligoj, Tomislav

Author_Institution

Fac. of Electr. Eng. & Comput., Univ. of Zagreb, Zagreb, Croatia

fYear

2014

fDate

26-30 May 2014

Firstpage

27

Lastpage

32

Abstract

Graphene field-effect transistors are fabricated using CVD-grown graphene and a wet transfer technique. Devices are characterized in terms of carrier mobility, contact resistance, output and transfer characteristics. We found that the mobility decreases and contact resistance increases with the decreasing graphene microstrip width. In addition, we found that graphene FET characteristics strongly depend on annealing time. The behavior of device characteristics is explained by discussing carrier scattering on defects and impurities, and the formation of pn-junctions in graphene.

Keywords

annealing; carrier mobility; chemical vapour deposition; contact resistance; field effect transistors; graphene; CVD grown graphene; annealing time; carrier mobility; carrier scattering; contact resistance; microscale graphene FET; microstrip width; wet transfer technique; Annealing; Contact resistance; Fabrication; Field effect transistors; Graphene; Microstrip; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2014 37th International Convention on

Conference_Location

Opatija

Print_ISBN

978-953-233-081-6

Type

conf

DOI

10.1109/MIPRO.2014.6859527

Filename

6859527