Efficiency of non-uniformly irradiated double-sided silicon strip detectors

Author

Dubbs, T. ; Kashigin, S. ; Kratzer, M. ; Kroeger, W. ; Pulliam, T. ; Sadrozinski, H.F.-W. ; Schwab, M. ; Spencer, E. ; Wichmann, R. ; Wilder, M. ; Unno, Y. ; Ohsugi, T.

Author_Institution

SCIPP, California Univ., Santa Cruz, CA, USA

Volume

1

fYear

1995

fDate

21-28 Oct 1995

Firstpage

488

Abstract

We have investigated the efficiency and the noise occupancy of double-sided silicon strip detectors, which were subjected to non-uniform proton irradiation of fluences up to a maximum of equivalent 5*10¹³ protons/cm². The depletion voltages, varying over time due to controlled annealing, were close to zero on one end of the 6 cm strips and 190 V at the high radiation end. We determined the efficiency and noise occupancy on both n-side and p-side in a ¹⁰⁶Ru telescope, using a binary read-out system with 22 ns shaping time. The n-side exhibits superior performance after type inversion

Keywords

proton effects; semiconductor device noise; silicon radiation detectors; 22 ns shaping time; ¹⁰⁶Ru telescope; binary read-out system; controlled annealing; depletion voltages; efficiency; fluences; high radiation end; n-side; noise occupancy; nonuniform proton irradiation; nonuniformly irradiated double-sided Si strip detectors; p-side; type inversion; Annealing; History; Large Hadron Collider; Noise shaping; Protons; Pulse amplifiers; Radiation detectors; Silicon radiation detectors; Strips; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-3180-X

Type

conf

DOI

10.1109/NSSMIC.1995.504273

Filename

504273