DocumentCode
1853133
Title
Verification of the wafer-level LRM+ calibration technique for GaAs applications up to 110 GHz
Author
Doerne, Ralf ; Rumiantsev, Andrej
Author_Institution
Ferdinand-Braun-Inst. fuer Hoechstfrequenztechnik, Berlin, Germany
fYear
2005
fDate
38520
Abstract
In this article the accuracy of the LRM+ calibration is compared to that of the benchmark NIST multiline TRL procedure for the first time. The comparison is performed on NIST verified GaAs coplanar waveguide calibration reference material 8130. The NIST calibration comparison method is used to quantify the difference between measured S-parameters corrected by NIST multiline TRL and an advanced LRM+ calibration. The worst-case error bounds for LRM+ corrected S-parameter measurements are determined up to 110 GHz. It is demonstrated that the difference between benchmark multiline TRL and LRM+ is comparable with the measurement system drift. Verification results prove that LRM+ can be successfully used for accurate GaAs on-wafer calibration with customized standards. This overcomes some drawbacks of multiline TRL while providing the same calibration accuracy.
Keywords
III-V semiconductors; S-parameters; calibration; coplanar waveguides; error correction; gallium arsenide; millimetre wave measurement; GaAs; NIST calibration comparison method; NIST multiline TRL procedure; S-parameter measurements; calibration reference material 8130; coplanar waveguide; error correction; measurement system drift; on-wafer calibration; scattering parameters measurement; wafer-level LRM+ calibration; Benchmark testing; Calibration; Coplanar waveguides; Error correction; Gallium arsenide; Impedance measurement; NIST; Radio frequency; Scattering parameters; System testing;
fLanguage
English
Publisher
ieee
Conference_Titel
ARFTG Conference Digest, 2005. Spring 2005. 65th
Print_ISBN
0-7803-8858-5
Type
conf
DOI
10.1109/ARFTGS.2005.1500562
Filename
1500562
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