DocumentCode :
1853133
Title :
Verification of the wafer-level LRM+ calibration technique for GaAs applications up to 110 GHz
Author :
Doerne, Ralf ; Rumiantsev, Andrej
Author_Institution :
Ferdinand-Braun-Inst. fuer Hoechstfrequenztechnik, Berlin, Germany
fYear :
2005
fDate :
38520
Abstract :
In this article the accuracy of the LRM+ calibration is compared to that of the benchmark NIST multiline TRL procedure for the first time. The comparison is performed on NIST verified GaAs coplanar waveguide calibration reference material 8130. The NIST calibration comparison method is used to quantify the difference between measured S-parameters corrected by NIST multiline TRL and an advanced LRM+ calibration. The worst-case error bounds for LRM+ corrected S-parameter measurements are determined up to 110 GHz. It is demonstrated that the difference between benchmark multiline TRL and LRM+ is comparable with the measurement system drift. Verification results prove that LRM+ can be successfully used for accurate GaAs on-wafer calibration with customized standards. This overcomes some drawbacks of multiline TRL while providing the same calibration accuracy.
Keywords :
III-V semiconductors; S-parameters; calibration; coplanar waveguides; error correction; gallium arsenide; millimetre wave measurement; GaAs; NIST calibration comparison method; NIST multiline TRL procedure; S-parameter measurements; calibration reference material 8130; coplanar waveguide; error correction; measurement system drift; on-wafer calibration; scattering parameters measurement; wafer-level LRM+ calibration; Benchmark testing; Calibration; Coplanar waveguides; Error correction; Gallium arsenide; Impedance measurement; NIST; Radio frequency; Scattering parameters; System testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ARFTG Conference Digest, 2005. Spring 2005. 65th
Print_ISBN :
0-7803-8858-5
Type :
conf
DOI :
10.1109/ARFTGS.2005.1500562
Filename :
1500562
Link To Document :
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