DocumentCode
1853293
Title
Three-port RF characterization of MOS transistors
Author
Mahalingam, Umashankar ; Rustagi, Subhash C. ; Samudra, Ganesh S.
Author_Institution
Inst. of Microelectron., Singapore
fYear
2005
fDate
38520
Firstpage
56
Lastpage
61
Keywords
MOSFET; S-parameters; equivalent circuits; microwave transistors; multiport networks; 2-port RF measurements; 3-port admittance matrix; 3-port admittance network parameters; 3-port capacitance coefficients; GPG probe impedance; MOS transistors; cut-off frequency; de-embedded admittance parameters; equivalent circuit; ground power ground probe; non-ideal short; nonquasistatic channel conduction; scattering parameters measurement; three-port RF characterization; y-parameter data; Admittance measurement; Capacitance measurement; Cutoff frequency; Equivalent circuits; Frequency measurement; Impedance measurement; MOSFET circuits; Probes; Radio frequency; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
ARFTG Conference Digest, 2005. Spring 2005. 65th
Print_ISBN
0-7803-8858-5
Type
conf
DOI
10.1109/ARFTGS.2005.1500569
Filename
1500569
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