Line-attenuator-line: an alternative method for in-fixture calibration

Author

Reynoso-Hernández, J.A. ; Loo-Yau, J.R. ; Ascencio-Ramírez, Hugo ; Saldivar, Juan Alberto ; Zúñiga-Juárez, J.E. ; Maya-Sánchez, Maria Del Carmen

Author_Institution

Depto. Electronica y Telecomunicaciones, Centro de Investigation Cientifica y de Educ. Superior de Ensenada, Mexico

fYear

2005

fDate

38520

Abstract

This work deals with in-fixture calibration using line-attenuator-reflect, LAR, and line-attenuator-line, LAL, as calibration standards. A novel procedure for in-fixture calibration using line-attenuator-line is presented. To demonstrate the usefulness of the proposed in-fixture calibration, the measured S parameters of a medium power GaAs HJ-FET NE651R479A are corrected with line-attenuator-reflect and line-attenuator-line. The S parameters corrected with LAR and LAL are in good agreement and any significant discrepancies were observed.

Keywords

III-V semiconductors; S-parameters; attenuators; calibration; field effect transistors; gallium arsenide; measurement standards; network analysers; GaAs; NE651R479A; S parameters; calibration standards; in-fixture calibration; line-attenuator-line; line-attenuator-reflect; power HJ-FET; Automatic testing; Calibration; Error correction; Gallium arsenide; Length measurement; Measurement standards; Packaging; Power measurement; Scattering parameters; Telecommunication standards;

fLanguage

English

Publisher

ieee

Conference_Titel

ARFTG Conference Digest, 2005. Spring 2005. 65th

Print_ISBN

0-7803-8858-5

Type

conf

DOI

10.1109/ARFTGS.2005.1500586

Filename

1500586