Design of an achievable, all lattice-matched multijunction solar cell using InGaAlAsSb

Author

Walters, R.J. ; González, M. ; Tischler, J.G. ; Lumb, M.P. ; Meyer, J.R. ; Vurgaftman, I. ; Abell, J. ; Yakes, M.K. ; Ekins-Daukes, N. ; Adams, J.G.J. ; Chan, N. ; Stavrinou, P. ; Jenkins, P.P.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

2011

fDate

19-24 June 2011

Abstract

A design for a realistically achievable, multijunction solar cell based on all lattice-matched materials with >;50% projected efficiencies under concentration is presented. Using quaternary materials such as InAlAsSb and InGaAlAs at stochiometries lattice-matched to InP substrates, direct bandgaps ranging from 0.74eV up to ~1.8eV, ideal for solar energy conversion, can be achieved. In addition, multi-quantum well structures are used to reduce the band-gap further to <;0.7 eV. A triple-junction (3J) solar cell using these materials is described, and in-depth modeling results are presented showing realistically achievable efficiencies of AM1.5D 500X of η ~ 53% and AM0 1 Sun of η~ 37%.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor quantum wells; solar cells; InGaAlAsSb; InP; direct bandgap; electron volt energy 0.74 eV to 1.8 eV; lattice-matched multijunction solar cell; multiquantum well structures; quaternary materials; solar energy conversion; Indium gallium arsenide; Indium phosphide; Junctions; Photonic band gap; Photovoltaic cells; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6185859

Filename

6185859