DocumentCode :
1853930
Title :
A self adaptive programming method with 5 mV accuracy for multi-level storage in FLASH
Author :
Engh, Lawrence D. ; Kordesch, Albert V. ; Liu, Chun-Mai
Author_Institution :
Winbond Electron. Corp. America, San Jose, CA, USA
fYear :
2002
fDate :
2002
Firstpage :
115
Lastpage :
118
Abstract :
The presented multi-level storage memory system uses a self-adaptive method that improves the cell model with each successive program cycle, and accommodates cell variations and noise. An accuracy of 5 mV is achieved within eight cycles, which total 125 μs. Algorithm control circuits occupy 1 mm2 of area in a 0.5 μm SSI FLASH process.
Keywords :
CMOS memory circuits; PLD programming; flash memories; 0.5 micron; 125 mus; 5 mV; SSI flash process; algorithm control circuits; cell model; cell variations; multi-level storage memory system; noise; self adaptive programming method; successive program cycle; Circuits; Current measurement; Flash memory; Flash memory cells; Iterative algorithms; Linear programming; Nonvolatile memory; Parallel programming; Pulse measurements; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002
Print_ISBN :
0-7803-7250-6
Type :
conf
DOI :
10.1109/CICC.2002.1012779
Filename :
1012779
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1853930
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