Title :
Ellipsometry analysis of a-Si:H/SnO2:F textured structures
Author :
Akagawa, Masataka ; Kageyama, Shota ; Fujiwara, Hiroyuki
Author_Institution :
Center of Innovative Photovoltaic Syst., Gifu Univ., Gifu, Japan
Abstract :
Spectroscopic ellipsometry (SE) has been applied successfully to characterize textured SnO2:F substrates as well as a-Si:H layers formed on textured SnO2:F substrates. For the textured SnO2:F substrates, we demonstrates that the carrier concentration and mobility can be extracted optically, in addition to the detailed film structure. Moreover, we have developed a new optical model that allows the complete evaluation of non-uniform a-Si:H/SnO2:F textured structures. The a-Si:H/SnO2:F textured structure deduced from SE shows remarkable agreement with that observed from transmission electron microscopy (TEM). The SE analysis method developed in this study can be applied further to establish high-precision characterization of large-area a-Si:H modules.
Keywords :
carrier density; carrier mobility; elemental semiconductors; ellipsometry; fluorine; hydrogen; semiconductor thin films; silicon; substrates; surface roughness; surface texture; tin compounds; transmission electron microscopy; transparency; Si:H-(SnO2:F); TEM; carrier concentration; carrier mobility; film structure; high-precision characterization; optical model; spectroscopic ellipsometry; surface roughness; textured substrate structure; transmission electron microscopy; transparency; Ellipsometry; Optical reflection; Optical refraction; Optical variables control; Rough surfaces; Substrates; Surface roughness;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6185873
