• DocumentCode
    1854048
  • Title

    Bipolar transistor equivalents in CMOS technology

  • Author

    Kim, Gyudong ; Kim, Min-Kyu ; Kim, Wonchan ; Bouzerdoum, Abdesselam

  • Author_Institution
    Dept. of Electron. Eng., Seoul Nat. Univ., South Korea
  • Volume
    1
  • fYear
    1995
  • fDate
    13-16 Aug 1995
  • Firstpage
    45
  • Abstract
    A CMOS circuit element equivalent to a bipolar junction transistor (BJT) which provides symmetrical performances of npn/pnp and ideality factor programming is proposed. Simulation showed that the β, and Early voltage are superior to those of a typical BJT below about 1.65 GHz in a 0.8 μm CMOS technology and the fabricated prototype has 2.3×10-16 A of IS, 2.4 mA of IKF and 390 V of Early voltage
  • Keywords
    CMOS integrated circuits; bipolar transistors; equivalent circuits; integrated circuit modelling; semiconductor device models; 0.8 micron; 2.4 mA; 390 V; BJT equivalent circuit; CMOS circuit element; CMOS technology; Early voltage; bipolar junction transistor; ideality factor programming; symmetrical performances; BiCMOS integrated circuits; Bipolar transistor circuits; Bipolar transistors; CMOS technology; Circuit simulation; Diodes; Impedance; MOSFETs; Postal services; Prototypes; Virtual prototyping; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1995., Proceedings., Proceedings of the 38th Midwest Symposium on
  • Conference_Location
    Rio de Janeiro
  • Print_ISBN
    0-7803-2972-4
  • Type

    conf

  • DOI
    10.1109/MWSCAS.1995.504374
  • Filename
    504374
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1854048