Title :
A 0.35-um CMOS switched-inductor dual-band LC-tank frequency divider
Author :
Jang, Sheng Lyang ; Lin, Che Yi ; Lee, Chien Feng
Author_Institution :
Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei
Abstract :
This paper presents a switched-inductor dual-band injection locked frequency divider (ILFD) fabricated in a 0.35-um CMOS process. The circuit is made of a differential double cross-coupled CMOS LC oscillator with a switched-inductor LC-tank, which consists of a parallel LC tank in parallel with one switched inductor composite. The dual-band function is obtained by switching the MOS switch in the inductor composite. At the supply voltage of 2.4 V, the measured free-running frequencies of the divide-by-two dual band ILFD are from 2.52 GHz to 2.61 GHz for the low-frequency band and from 4.18 GHz to 4.39 GHz for the high-frequency band. At the incident power of 0 dBm. the locking ranges of low-frequency and high-frequency band are respectively from 4.0 GHz to 5.8 GHz and from 7.1 GHz to 9.3 GHz.
Keywords :
CMOS integrated circuits; UHF oscillators; frequency dividers; inductors; microwave oscillators; CMOS switched-inductor; LC oscillator; LC-tank frequency divider; dual band frequency divider; frequency 2.52 GHz to 2.61 GHz; frequency 4.0 GHz to 5.8 GHz; frequency 7.1 GHz to 9.3 GHz; injection locked frequency divider; size 0.35 mum; voltage 2.4 V; CMOS process; Dual band; Frequency conversion; Frequency measurement; Inductors; Injection-locked oscillators; Signal generators; Switches; Switching circuits; Voltage-controlled oscillators; CMOS; Dual-band; LC-tank oscillator; injection-locked frequency divider; switched resonator;
Conference_Titel :
VLSI Design, Automation and Test, 2008. VLSI-DAT 2008. IEEE International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1616-5
Electronic_ISBN :
978-1-4244-1617-2
DOI :
10.1109/VDAT.2008.4542457
