Development and evaluation of AuSi eutectic wafer bonding

Author

Lin, Y.-C. ; Baum, M. ; Haubold, M. ; Frömel, J. ; Wiemer, M. ; Gessner, T. ; Esashi, M.

Author_Institution

WPI Adv. Inst. for Mater. Res., Tohoku Univ., Sendai, Japan

fYear

2009

fDate

21-25 June 2009

Firstpage

244

Lastpage

247

Abstract

In this paper, wafer-to-wafer AuSi eutectic bonding was investigated and evaluated with various sets of experimental parameters. Single crystalline Si and amorphous Si were bonded with different dimension Au layers and observed by optical measurements. Material composition, adhesion layer, electrical insulation, bonding parameters, and surface pre-treatments were discussed and have improved bonding performance. Bond strength determined by micro-chevron-test and shear test was evaluated as well as hermeticity. High bond yield was achieved with 4 inch and 6 inch wafer stacks.

Keywords

adhesive bonding; amorphous semiconductors; elemental semiconductors; eutectic alloys; gold alloys; insulation; integrated circuit bonding; mechanical strength; silicon alloys; wafer bonding; wafer-scale integration; AuSi; adhesion layer; amorphous silicon; bond strength; bonding parameters; electrical insulation; hermeticity; material composition; microchevron-test; optical measurements; shear test; single crystalline silicon; size 4 inch; size 6 inch; wafer-to-wafer eutectic bonding; Adhesives; Amorphous materials; Composite materials; Crystalline materials; Crystallization; Dielectrics and electrical insulation; Gold; Optical materials; Testing; Wafer bonding; AuSi eutectic; integration technology; wafer level bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Conference_Location

Denver, CO

Print_ISBN

978-1-4244-4190-7

Electronic_ISBN

978-1-4244-4193-8

Type

conf

DOI

10.1109/SENSOR.2009.5285519

Filename

5285519