DocumentCode
1854308
Title
Reliability of optoelectronic devices for fiber optic communications
Author
Chiu, L.C. ; Li, K. ; Pendse, D. ; Lee, H.C. ; Fern, C.
Author_Institution
PCO Inc., Chatsworth, CA, USA
fYear
1990
fDate
23-25 Jan 1990
Firstpage
177
Lastpage
191
Abstract
Addressed are fundamental issues related to the reliability of three key optoelectronic devices for long-wavelength fiberoptic communications: InGaAsP LEDs, lasers, and PIN detectors. Degradation modes associated with metallization, crystal growth, device structure, and passivation materials are discussed. It is shown that with proper burn-in and screening, highly reliable devices can be manufactured
Keywords
indium compounds; light emitting diodes; optical cables; optical links; p-i-n diodes; reliability; semiconductor junction lasers; InGaAsP; LEDs; PIN detectors; burn-in; crystal growth; degradation; device structure; fiber optic communications; lasers; long-wavelength; metallization; optoelectronic devices; passivation materials; reliability; screening; semiconductors; Degradation; Fiber lasers; Laser modes; Light emitting diodes; Metallization; Optical fiber communication; Optical fiber devices; Optical fibers; Optoelectronic devices; Passivation;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability and Maintainability Symposium, 1990. Proceedings., Annual
Conference_Location
Los Angeles, CA
Type
conf
DOI
10.1109/ARMS.1990.67954
Filename
67954
Link To Document