Title :
Reliability of optoelectronic devices for fiber optic communications
Author :
Chiu, L.C. ; Li, K. ; Pendse, D. ; Lee, H.C. ; Fern, C.
Author_Institution :
PCO Inc., Chatsworth, CA, USA
Abstract :
Addressed are fundamental issues related to the reliability of three key optoelectronic devices for long-wavelength fiberoptic communications: InGaAsP LEDs, lasers, and PIN detectors. Degradation modes associated with metallization, crystal growth, device structure, and passivation materials are discussed. It is shown that with proper burn-in and screening, highly reliable devices can be manufactured
Keywords :
indium compounds; light emitting diodes; optical cables; optical links; p-i-n diodes; reliability; semiconductor junction lasers; InGaAsP; LEDs; PIN detectors; burn-in; crystal growth; degradation; device structure; fiber optic communications; lasers; long-wavelength; metallization; optoelectronic devices; passivation materials; reliability; screening; semiconductors; Degradation; Fiber lasers; Laser modes; Light emitting diodes; Metallization; Optical fiber communication; Optical fiber devices; Optical fibers; Optoelectronic devices; Passivation;
Conference_Titel :
Reliability and Maintainability Symposium, 1990. Proceedings., Annual
Conference_Location :
Los Angeles, CA
DOI :
10.1109/ARMS.1990.67954
