Modeling the gate-related high-frequency and noise characteristics of deep-submicron MOSFETs

Author

Kraus, Rainer ; Knoblinge, Gerhard

Author_Institution

Univ. der Bundeswehr Munchen, Neubiberg, Germany

fYear

2002

fDate

2002

Firstpage

209

Lastpage

212

Abstract

This paper presents a compact model considering the high-frequency and noise effects at the gate of MOS transistors which are caused by the channel resistance in series to the gate capacitance. The real part of input impedance, nonquasistatic charge variations and induced gate noise with correlation to the drain noise are the results. A model equation of the induced gate noise is developed for MOSFETs with very short channel lengths. Comparisons with measurements verify the accuracy of the model and its validity for short and long channel transistors.

Keywords

MOSFET; microwave field effect transistors; semiconductor device models; semiconductor device noise; MOS transistors; channel resistance; compact model; deep-submicron MOSFETs; drain noise; gate capacitance; gate-related high-frequency characteristics; gate-related noise characteristics; induced gate noise; long channel transistors; nonquasistatic charge variations; short channel transistors; very short channel lengths; Circuit noise; Circuit simulation; Electrons; Equations; Frequency; MOSFETs; Predictive models; Semiconductor device modeling; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002

Print_ISBN

0-7803-7250-6

Type

conf

DOI

10.1109/CICC.2002.1012798

Filename

1012798