DocumentCode
1854393
Title
Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells
Author
Lim, Swee H. ; Allen, Charles R. ; Ding, Ding ; Liu, Xinyu ; Furdyna, Jacek K. ; Vasileska, Dragica ; Zhang, Yong-Hang
Author_Institution
Center for Photonics Innovation & Sch. of Electr., Arizona State Univ., Tempe, AZ, USA
fYear
2011
fDate
19-24 June 2011
Abstract
We investigate the interface of InAs/GaSb as a device structure to enhance tunneling between subcells in multi-junction solar cells. Simulation is performed to study the conduction and valence band profile at the interfaces and determine the size of the tunneling barriers for charge carriers. An InAs/GaSb tunnel diode is also grown and fabricated. The conduction properties of this tunnel diode show good ohmic behavior and low contact resistance.
Keywords
III-V semiconductors; gallium compounds; indium compounds; semiconductor growth; solar cells; tunnel diodes; InAs-GaSb; broken gap interface; cascade tunnel diode; charge carriers; multijunction solar cells; valence band profile; Charge carrier processes; Junctions; Materials; Photovoltaic cells; Resistance; Semiconductor diodes; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location
Seattle, WA
ISSN
0160-8371
Print_ISBN
978-1-4244-9966-3
Type
conf
DOI
10.1109/PVSC.2011.6185893
Filename
6185893
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