DocumentCode
1854463
Title
Dry self-alignment for batch-assembly of chips
Author
Kurniawan, I. ; Tichem, M. ; Staufer, U.
Author_Institution
Dept. of Precision & Microsyst. Eng., Delft Univ. of Technol., Delft, Netherlands
fYear
2009
fDate
21-25 June 2009
Firstpage
212
Lastpage
215
Abstract
This paper reports experimental results on a dry self-alignment method using a combination of electrostatic fields and mechanical traps to position microsystem chips on a carrier wafer. The electrostatic fields were created by charging SiO2 layers patterned on the carrier and the chips. Pedestal-cavity mating-structures were employed as spacers to avoid premature sticking and ensure unique alignment position. Vertical vibration was applied to stochastically move the chips. During 10 repetitive experiments, 16 dummy-chips with dimension 2times2 mm were accurately aligned on the carrier within an average of 30 seconds and standard deviation of 11 seconds. This method can be used to batch assemble different types of chips, e.g. by carrier-to-carrier transfer, in dry environment with high accuracy and low cost.
Keywords
electron traps; self-assembly; silicon compounds; vibrations; wafer-scale integration; SiO2; carrier-to-carrier transfer; chips batch-assembly; dry self-alignment; dummy-chips; electrostatic fields; mechanical traps; pedestal-cavity mating-structures; vertical vibration; Assembly; Charge transfer; Clamps; Costs; Electrostatics; Laboratories; Self-assembly; Surface charging; Surface treatment; Vibrations; MEMS; Self-assembly; batch transfer; electrostatic; hybrid integration; micro-assembly; microsystems;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location
Denver, CO
Print_ISBN
978-1-4244-4190-7
Electronic_ISBN
978-1-4244-4193-8
Type
conf
DOI
10.1109/SENSOR.2009.5285527
Filename
5285527
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