DocumentCode
1854484
Title
Fabrication of nanoperforated silicon membranes with tunable sized high aspect ratio holes
Author
Sainiemi, L. ; Viheriälä, J. ; Laukkanen, J. ; Niemi, T. ; Franssila, S.
Author_Institution
Dept. of Micro & Nanosci., Helsinki Univ. of Technol., Espoo, Finland
fYear
2009
fDate
21-25 June 2009
Firstpage
200
Lastpage
203
Abstract
We present a fabrication process for free-standing, nanoperforated membranes which are made of single-crystalline silicon. The membranes are fabricated out of silicon-on-insulator wafers. The mask for nanoperforations is patterned on the device layer side of the wafer using nanoimprint lithography. The membrane is released by etching through the handle wafer and the buried oxide layer from the backside of the wafer. The nanoperforations are created by the final cryogenic deep reactive ion etching step through the device layer. The process circumvents problems related to notching effect. As the last process step, narrowing of the pores is done by conformal atomic layer deposition of aluminum oxide. The thickness of the membrane is 3 mum and pore diameters of 200 nm and 420 nm are demonstrated.
Keywords
aluminium compounds; atomic layer deposition; masks; nanofabrication; nanolithography; nanoporous materials; silicon; soft lithography; sputter etching; Al2O3; Si; aluminum oxide; conformal atomic layer deposition; cryogenic deep reactive ion etching step; nanoimprint lithography; nanoperforated silicon membrane fabrication; notching effect; silicon-on-insulator wafers; single-crystalline silicon; size 200 nm; size 3 mum; size 420 nm; tunable sized high aspect ratio holes; Atomic layer deposition; Biomembranes; Cryogenics; Etching; Nanolithography; Nanopatterning; Nanoscale devices; Optical device fabrication; Resists; Silicon on insulator technology; Deep reactive ion etching; filter; membrane; nanoimprint lithography;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location
Denver, CO
Print_ISBN
978-1-4244-4190-7
Electronic_ISBN
978-1-4244-4193-8
Type
conf
DOI
10.1109/SENSOR.2009.5285528
Filename
5285528
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