• DocumentCode
    1854521
  • Title

    Three terminal Si-Si:Ge solar cells

  • Author

    Wang, Lu ; Wang, Yi ; Gerger, Andrew ; Lochtefeld, Anthony ; Shreve, Kevin ; Barnett, Allen

  • Author_Institution
    Solar Power Program, Univ. of Delaware, Newark, DE, USA
  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    A 3-terminal Si-Si:Ge tandem solar cell, which consists of a top silicon solar cell and a bottom Si:Ge solar cell sharing a common base, has been designed and fabricated. This solar cell is designed to replace standalone Si solar cell and Si:Ge solar cell in a multi-junction solar cell system in order to simplify the module, improve its performance and reduce its cost. Initial results show that both Si solar cells and Si:Ge solar cells in this structure can achieve good performance. The best Si solar cell shows a Voc 598.5mV, Jsc 22.9mA/cm2 and FF 77.3% under one sun, best Si:Ge solar cell shows a Voc 189mV and Jsc 3.26mA/cm2 below silicon filter. None of these solar cells have anti-reflection coatings.
  • Keywords
    antireflection coatings; elemental semiconductors; equivalent circuits; germanium; silicon; solar cells; 3-terminal tandem solar cell; Si-Si:Ge; antireflection coatings; multijunction solar cell system; silicon filter; silicon solar cell; voltage 189 mV; voltage 598.5 mV; Doping; Epitaxial layers; Fabrication; Photovoltaic cells; Silicon; Substrates; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6185901
  • Filename
    6185901