Title :
SOI Hall effect sensor operating up to 270°C
Author :
Portmann, Lionel ; Ballan, Hussein ; Declercq, Michel
Author_Institution :
Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
The design of a 5 Volts fully integrated magnetic sensor able to operate up to 270°C is presented. Fabricated in a Partially Depleted (PD) 1 μm SOI process, this monolithic sensor comprises a resistive Hall plate, an amplifier stage and an A/D converter delivering a temperature stabilized 8-bit digital readout of the magnetic field. This circuit uses analog techniques for continuous compensation of temperature. Design issues inherent to partially depleted SOI, as well as constraints due to high temperature, are discussed.
Keywords :
CMOS integrated circuits; Hall effect transducers; compensation; digital readout; high-temperature electronics; magnetic field measurement; magnetic sensors; mixed analogue-digital integrated circuits; silicon-on-insulator; 1 micron; 270 C; 5 V; A/D converter; HV-MOS; SOI Hall effect sensor; amplifier stage; analog techniques; continuous temperature compensation; fully integrated magnetic sensor; magnetic field sensing; monolithic sensor; partially depleted SOI process; resistive Hall plate; temperature stabilized 8-bit digital readout; Aerospace industry; Automotive engineering; Circuits; Hall effect; Hall effect devices; Magnetic sensors; Silicon; Temperature sensors; Thin film transistors; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2002. Proceedings of the IEEE 2002
Print_ISBN :
0-7803-7250-6
DOI :
10.1109/CICC.2002.1012811
