Title :
First demonstration of monolithic InP-based InAlAs/InGaAsP/InGaAs triple junction solar cells
Author :
Woo, Robyn L. ; Hong, William D. ; Mesropian, Shoghig ; Leite, Marina S. ; Atwater, Harry A. ; Law, Daniel C.
Author_Institution :
A Boeing Co., Spectrolab, Inc., Sylmar, CA, USA
Abstract :
Spectrolab has demonstrated the first lattice matched InAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising results with an open circuit voltage (Voc) of 1.8V, a short-circuit current density (Jsc) of 11.0 mA/cm2, a fill factor of 64.4%, and a 1-sun AM1.5D efficiency of 13.8%. The same cell also passes 27-suns under concentration. Improvements in layer design and crystal quality of advanced features can further raise the 1-sun and concentrated AM1.5D conversion efficiency of the InP-based triple junction cell beyond 20%.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; current density; gallium arsenide; indium compounds; semiconductor growth; short-circuit currents; solar cells; InAlAs-InGaAsP-InGaAs; InP; X-ray diffraction; conversion efficiency; crystal quality; fill factor; lattice matching; layer design; monolithic triple junction solar cells; open circuit voltage; short-circuit current density; solar cell materials; voltage 1.8 V; Indium gallium arsenide; Indium phosphide; Junctions; Lattices; Photovoltaic cells;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6185903
