DocumentCode :
1854585
Title :
Efficient 974 nm emission through up-conversion in ErxYb2−xSi2O7 thin films for Si solar cells
Author :
Zheng, Jun ; Tao, Yeliao ; Wang, Wei ; Xue, Chunlai ; Zeng, Xiangbo ; Zuo, Yuhua ; Cheng, Buwen ; Wang, Qiming
Author_Institution :
State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China
fYear :
2011
fDate :
19-24 June 2011
Abstract :
Erbium-ytterbium disilicate films were grown on SiO2/Si substrate by magnetron sputtering method. Intense 974 nm emission was observed in the ErxYb2-xSi2O7 films by room temperature photoluminescence tests. The 974 nm emission was mainly from the transition 2F7/2 to 2F5/2 level of Yb3+ upon exploring energy-transfer via up-conversion (ETU) at Er3+ 4I13/2 level. The ETU process at Er3+ 4I13/2 level was studied in detail.
Keywords :
erbium compounds; photoluminescence; silicon compounds; solar cells; sputtering; thin films; ytterbium compounds; ETU process; ErxYb2-xSi2O7; SiO2-Si; disilicate films; emission through up-conversion; energy-transfer via up-conversion; magnetron sputtering method; photoluminescence tests; solar cells; temperature 293 K to 298 K; thin films; Erbium; Films; Laser excitation; Photonics; Photovoltaic cells; Pump lasers; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6185906
Filename :
6185906
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1854585
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